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In keeping with our Green directive, JFI evaluated its data center's carbon footprint to see if it was possible to reduce or eliminate it. We mathematically modeled the computers and discovered the largest energy consumption was in the memory and disk storage. With that mission in mind, JFI design and engineering team discovered among many great future technologies that Magnetic Memory is suitable to replace flash, DRAM and Hard Disk Drives. This is mainly due to the fact that Magnetic Memory offers a proven energy conservation feature at its most basic application while sitting idle.
One of JFI's recently patent-pending technology involves an innovative Magnetic Memory Chip technology which is based on MRAM chip design principles and methodologies. This chip design conforms to nanometer fabrication standard and complies with CMOS fabrication process to provide a low risk fabrication yield. An MRAM chip design arrays for mass production can be ready for licensing in 12 months. This technology is designed to replace all storage and embedded memory chip and component, including but not limited to Solid State Disk Drives (SSDD).
Solid State Disk Drives (SSDD):
SSDD are a type of HDD that uses battery backed up DRAM chips with logic storage cells rather than rapid rotating magnetic disks. These have been around for 20 years and have not caught on due to the problems with DRAM and long term storage. But the much faster access times have found SSDD a consumer market in High Performance Computer Virtual Memory (VM). VM is a technique to allow an Operating System to use the HDD for temporary storage when it runs out of DRAM memory. VM runs very slow if it is on a HDD, very fast if it runs on a SSDD, and even faster when it runs in RAM. Industry Analysts are predicting that MRAM might be capable of solving the current SSDD problems. This would allow the production of SSDD with similar capacities to HDD and similar access times to DRAM. This would be a significant improvement to current HDD technology and it would open up a brand new consumer electronic market potential for MRAM.
MRAM Definition:
MRAM is a memory (RAM) technology that uses electron spin to store information (based on Spintronics). MRAM has been called "the ideal memory," potentially combining the density of DRAM with the speed of SRAM and non-volatility of FLASH memory or hard disk, and all this while consuming a very low amount of power. MRAM can be radiation hardened, and can operate in extreme temperature conditions, very suited for military and space applications.
Principles of MRAM:
MRAM normally functions by constructing minuscule magnetic fields at intersections in a grid of nanoscopic power rails. When current attempts to travel through a power rail which is opposing the polarization of one of the magnetic field bits, its current flow is mitigated and the bit value stored by the field is detected by this weakened current flow.
MRAM Chip Technology:
The common MRAM technology is based on the Giant Magneto-resistance (GMR) principle. GMR can be detected using a Magnetic Tunnel Junction (MTJ). MTJ is used to change the bit read output current or voltage to determine a logic state. MTJs are difficult structures to manufacture. The fabricators will not be ready to produce them for at least four years.
Why MRAM?:
The U.S. government and semiconductor industry have proven that MRAM technology is to offer significant advantages over competing memory technologies. JFI concurs. Through its own independent research and discovery efforts, JFI finds the following benefits of MRAM, as listed below.
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That the simplistic MRAM chip architectural design can provide substantially lower fabrication and manufacturing costs.
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That MRAM chip requires much less energy to operate.
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That system designing can be consolidated into one type of memory, as supposed to requiring separate memories such as RAM, ROM and Flash.
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That MRAM chip will provide faster boot-up time to the systems.
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That MRAM chip can provide the highly desirable radiation hardening feature.
Today, technology companies globally, large and small alike, are competing fiercely to come up with an economically viable MRAM chip design ahead of their competitors.
JFI has successfully achieved patent-pending status for its economically viable MRAM chip design. This technology is ready to be applied to the chip prototypes. After the prototype is produced JFI's Intellectual Property Licensing Company will be able to offer licensing agreements to any companies desiring to grab this lucrative and highly sought after opportunity which provides at least 3-year competitive edge ahead of competitors.
For further information and investor/funding opportunity inquiry, please visit our
Investor/Funding Relations
for further instructions.
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